By Slava V. Rotkin, Shekhar Subramoney
The publication describes the cutting-edge in basic, utilized and machine physics of nanotubes, together with fabrication, manipulation and characterization for gadget purposes; optics of nanotubes; delivery and electromechanical units and basics of conception for functions. this data is important to the sector of nanoscience because nanotubes have the aptitude to turn into a really major digital fabric for many years to return. The booklet will profit all all readers drawn to the appliance of nanotubes, both of their theoretical foundations or in newly constructed characterization instruments that can permit sensible gadget fabrication.
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Extra info for Applied Physics of Carbon Nanotubes: Fundamentals of Theory, Optics and Transport Devices
1 we assumed that the charge density σ has no dependence on the angular coordinate β along the nanotube circumference. 31). Let us prove this assumption for the dipole polarization of the SWNT. V. un. 1 E, eV Fig. 7. DoS of the [10,10] armchair nanotube in vicinity of ﬁrst Van Hove singularity (black color). Charge injection in the NT due to work function diﬀerence (see the text) results in a splitting of a doublet, which is clearly seen as compared to bare DoS of neutral NT (light gray color) between the axis of the tube and the metal surface.
Perturbation theory for nanotubes (similar to what was used in ) predicts a maximum gap that depends only on the size of the tube and scales as R−2 or n−2 . 3 Switching OFF Quasi–metallic Zigzag Nanotube While opening the energy gap in the metallic armchair SWNT requires a special symmetry of the gate potential, quasi–metallic tubes are the best candidates for band gap engineering. As we already noticed in Sect. 5, the uniform external electric ﬁeld applied across a zigzag quasi–metallic nanotube opens the gap, as a result of the Stark eﬀect.
An ideal SWNT theoretically has very high conductance, ultimately approaching the ballistic limit. As we have shown in the last section, certain SWNTs can undergo the metal–semiconductor transition under the action of a uniform electric ﬁeld. This metal–semiconductor (metal–insulator) transition allows us to obtain a transistor action. Next we introduce the concept of local gating. Electric ﬁelds with large gradients may lead to a stimulated symmetry breaking (as compared to the spontaneous symmetry breaking considered in Sect.